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Microsemi Power Products Group APTGF50TDU120PG IGBT Module

#Microsemi Power Products Group, #APTGF50TDU120PG, #IGBT_Module, #IGBT, APTGF50TDU120PG Insulated Gate Bipolar Transistor, 75A I(C), 1200V V(BR)CES, N-Channel, ROHS COMPLIANT, SP6-P, MODULE-21

· Categories: IGBT Module
· Manufacturer: Microsemi Power Products Group
· Price: US$
· Date Code: Lead free / RoHS Compliant
. Available Qty: 364
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APTGF50TDU120PG Specification

Sell APTGF50TDU120PG, #Microsemi Power Products Group #APTGF50TDU120PG Stock, APTGF50TDU120PG Insulated Gate Bipolar Transistor, 75A I(C), 1200V V(BR)CES, N-Channel, ROHS COMPLIANT, SP6-P, MODULE-21; APTGF50TDU120PG, #IGBT_Module, #IGBT, #APTGF50TDU120PG
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Manufacturer Part Number: APTGF50TDU120PGPbfree Code: YesPart Life Cycle Code: Not RecommendedIhs Manufacturer: MICROSEMI CORPPart Package Code: MODULEPackage Description: FLANGE MOUNT, R-XUFM-X21Pin Count: 21ECCN Code: EAR99Manufacturer: Microsemi CorporationRisk Rank: 5.16Case Connection: ISOLATEDCollector Current-Max (IC): 75 ACollector-Emitter Voltage-Max: 1200 VConfiguration: 3 BANKS, COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN DIODEGate-Emitter Voltage-Max: 20 VJESD-30 Code: R-XUFM-X21JESD-609 Code: e1Moisture Sensitivity Level: 1Number of Elements: 6Number of Terminals: 21Operating Temperature-Max: 150 °CPackage Body Material: UNSPECIFIEDPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 312 WQualification Status: Not QualifiedSubcategory: Insulated Gate BIP TransistorsSurface Mount: NOTerminal Finish: TIN SILVER COPPERTerminal Form: UNSPECIFIEDTerminal Position: UPPERTime Insulated Gate Bipolar Transistor, 75A I(C), 1200V V(BR)CES, N-Channel, ROHS COMPLIANT, SP6-P, MODULE-21

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