Microsemi Power Products Group APTGT50H60T1G IGBT Module

Manufacturer Part Number: APTGT50H60T1GPbfree Code: YesPart Life Cycle Code: ActiveIhs Manufacturer: MICROSEMI CORPPackage Description: FLANGE MOUNT, R-XUFM-T12Pin Count: 12ECCN Code: EAR99Manufacturer: Microsemi CorporationRisk Rank: 5.61Case Connection: ISOLATEDCollector Current-Max (IC): 80 ACollector-Emitter Voltage-Max: 600 VConfiguration: BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE AND THERMISTORGate-Emitter Voltage-Max: 20 VJESD-30 Code: R-XUFM-T12JESD-609 Code: e1Moisture Sensitivity Level: 1Number of Elements: 4Number of Terminals: 12Operating Temperature-Max: 175 °CPackage Body Material: UNSPECIFIEDPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 176 WQualification Status: Not QualifiedSubcategory: Insulated Gate BIP TransistorsSurface Mount: NOTerminal Finish: TIN SILVER COPPERTerminal Form: THROUGH-HOLETerminal Position: UPPERTime Insulated Gate Bipolar Transistor, 80A I(C), 600V V(BR)CES, N-Channel, ROHS COMPLIANT, SP1, 12 PIN