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Microsemi ARF1501

  • ARF1501
  • ARF1501 RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, CERAMIC PACKAGE-6

    · Categories: IGBT
    · Manufacturer: Microsemi
    · Price:
    Price Range: US$ 50 - US$ 200 (Estimated)
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    · Date Code: Please Verify on Quote
    . Available Qty: 182
    MOQ: 1 PC
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    Content last revised on July 21, 2024

    Manufacturer Part Number: ARF1501
    Pbfree Code: No
    Part Life Cycle Code: Active
    Ihs Manufacturer: MICROSEMI CORP
    Package Description: FLATPACK, S-CDFP-F6
    Pin Count: 6
    ECCN Code: EAR99
    Manufacturer: Microsemi Corporation
    Risk Rank: 1.65
    Additional Feature: HIGH RELIABILITY
    Case Connection: ISOLATED
    Configuration: SINGLE
    DS Breakdown Voltage-Min: 1000 V
    Drain Current-Max (Abs) (ID): 30 A
    Drain Current-Max (ID): 30 A
    FET Technology: METAL-OXIDE SEMICONDUCTOR
    Highest Frequency Band: VERY HIGH FREQUENCY BAND
    JESD-30 Code: S-CDFP-F6
    JESD-609 Code: e0
    Number of Elements: 1
    Number of Terminals: 6
    Operating Mode: ENHANCEMENT MODE
    Operating Temperature-Max: 175 °C
    Package Body Material: CERAMIC, METAL-SEALED COFIRED
    Package Shape: SQUARE
    Package Style: FLATPACK
    Peak Reflow Temperature (Cel): NOT SPECIFIED
    Polarity/Channel Type: N-CHANNEL
    Power Dissipation-Max (Abs): 1500 W
    Qualification Status: Not Qualified
    Subcategory: FET General Purpose Power
    Surface Mount: YES
    Terminal Finish: TIN LEAD
    Terminal Form: FLAT
    Terminal Position: DUAL
    Time
    RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, CERAMIC PACKAGE-6

    v1.2.0