#Avago Technologies US Inc., #ATF_33143_TR2G, #IGBT_Module, #IGBT, ATF-33143-TR2G RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, High Electron Mo
Manufacturer Part Number: ATF-33143-TR2GRohs Code: YesPart Life Cycle Code: ObsoleteIhs Manufacturer: Broadcom LTDPackage Description: SMALL OUTLINE, R-PDSO-G4ECCN Code: EAR99HTS Code: 8541.21.00.75Manufacturer: Broadcom LimitedRisk Rank: 5.09Additional Feature: LOW NOISECase Connection: SOURCEConfiguration: SINGLEDS Breakdown Voltage-Min: 5.5 VFET Technology: HIGH ELECTRON MOBILITYHighest Frequency Band: X BANDJESD-30 Code: R-PDSO-G4JESD-609 Code: e3Moisture Sensitivity Level: 1Number of Elements: 1Number of Terminals: 4Operating Mode: DEPLETION MODEOperating Temperature-Max: 160 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: SMALL OUTLINEPeak Reflow Temperature (Cel): 260Polarity/Channel Type: N-CHANNELPower Dissipation Ambient-Max: 0.6 WPower Gain-Min (Gp): 13.5 dBQualification Status: Not QualifiedSubcategory: FET RF Small SignalsSurface Mount: YESTerminal Finish: Matte Tin (Sn)Terminal Form: GULL WINGTerminal Position: DUALTime RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, LEAD FREE, PLASTIC, SC-70, 4 PIN