#Diodes Inc, #BCP68TA, #IGBT_Module, #IGBT, BCP68TA Power Bipolar Transistor, 1A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin; BCP68TA
Manufacturer Part Number: BCP68TAPart Life Cycle Code: ObsoleteIhs Manufacturer: DIODES INCPackage Description: SMALL OUTLINE, R-PDSO-G4ECCN Code: EAR99HTS Code: 8541.29.00.75Manufacturer: Diodes IncorporatedRisk Rank: 5Case Connection: COLLECTORCollector Current-Max (IC): 1 ACollector-Emitter Voltage-Max: 20 VConfiguration: SINGLEDC Current Gain-Min (hFE): 63JESD-30 Code: R-PDSO-G4Number of Elements: 1Number of Terminals: 4Package Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: SMALL OUTLINEPolarity/Channel Type: NPNQualification Status: Not QualifiedSurface Mount: YESTerminal Form: GULL WINGTerminal Position: DUALTransistor Application: AMPLIFIERTransistor Element Material: SILICONTransition Frequency-Nom (fT): 100 MHz Power Bipolar Transistor, 1A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin