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NXP Semiconductors BLP7G22-05Z

  • BLP7G22-05Z
  • BLP7G22-05Z RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, MO-229, 6 X 4 MM, 0.85 MM HEIGHT, ROHS COMPLIANT, THIN, PLASTIC, HVSON-12; BLP7G22-05Z

    · Categories: IGBT
    · Manufacturer: NXP Semiconductors
    · Price:
    Price Range: US$ 50 - US$ 200 (Estimated)
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    · Date Code: Please Verify on Quote
    . Available Qty: 999
    MOQ: 1 PC
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    1-2 Days Lead Time
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    Content last revised on April 30, 2023

    Manufacturer Part Number: BLP7G22-05ZRohs Code: YesPart Life Cycle Code: Contact ManufacturerIhs Manufacturer: AMPLEON NETHERLANDS B VPackage Description: SMALL OUTLINE, R-PDSO-N12ECCN Code: EAR99Manufacturer: AmpleonRisk Rank: 5.67Case Connection: SOURCEConfiguration: SINGLEDS Breakdown Voltage-Min: 65 VFET Technology: METAL-OXIDE SEMICONDUCTORHighest Frequency Band: S BANDJEDEC-95 Code: MO-229JESD-30 Code: R-PDSO-N12Number of Elements: 1Number of Terminals: 12Operating Mode: ENHANCEMENT MODEPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: SMALL OUTLINEPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELReference Standard: IEC-60134Surface Mount: YESTerminal Form: NO LEADTerminal Position: DUALTime RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, MO-229, 6 X 4 MM, 0.85 MM HEIGHT, ROHS COMPLIANT, THIN, PLASTIC, HVSON-12