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SIEMENS BSM10GD100D

  • BSM10GD100D

BSM10GD100D Insulated Gate Bipolar Transistor, 10A I(C), 1000V V(BR)CES; BSM10GD100D

· Categories: IGBT
· Manufacturer: SIEMENS
· Price:
Price Range: US$ 50 - US$ 200 (Estimated)
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· Date Code: Please Verify on Quote
. Available Qty: 116
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Content last revised on May 26, 2023

Manufacturer Part Number: BSM10GD100DPart Life Cycle Code: ActiveIhs Manufacturer: Infineon TECHNOLOGIES AGManufacturer: Infineon Technologies AGRisk Rank: 5.73Collector Current-Max (IC): 10 ACollector-Emitter Voltage-Max: 1000 VNumber of Elements: 1Power Dissipation-Max (Abs): 50 WSubcategory: Insulated Gate BIP TransistorsVCEsat-Max: 2.8 V Insulated Gate Bipolar Transistor, 10A I(C), 1000V V(BR)CES

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