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Diodes Inc BSS138W-7-F

  • BSS138W-7-F

BSS138W-7-F Small Signal Field-Effect Transistor, 0.2A I(D), 50V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3; BSS138W-7-F

· Categories: IGBT
· Manufacturer: Diodes Inc
· Price:
Price Range: US$ 50 - US$ 200 (Estimated)
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· Date Code: Please Verify on Quote
. Available Qty: 87151
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Content last revised on August 26, 2023

Manufacturer Part Number: BSS138W-7-FPbfree Code: YesPart Life Cycle Code: ActiveIhs Manufacturer: DIODES INCPackage Description: SMALL OUTLINE, R-PDSO-G3Pin Count: 3ECCN Code: EAR99Manufacturer: Diodes IncorporatedRisk Rank: 0.89Additional Feature: LOW THRESHOLDConfiguration: SINGLE WITH BUILT-IN DIODEDS Breakdown Voltage-Min: 50 VDrain Current-Max (Abs) (ID): 0.2 ADrain Current-Max (ID): 0.2 ADrain-source On Resistance-Max: 3.5 ΩFET Technology: METAL-OXIDE SEMICONDUCTORFeedback Cap-Max (Crss): 8 pFJESD-30 Code: R-PDSO-G3JESD-609 Code: e3Moisture Sensitivity Level: 1Number of Elements: 1Number of Terminals: 3Operating Mode: ENHANCEMENT MODEOperating Temperature-Max: 150 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: SMALL OUTLINEPeak Reflow Temperature (Cel): 260Polarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 0.2 WQualification Status: Not QualifiedReference Standard: AEC-Q101Subcategory: FET General Purpose PowersSurface Mount: YESTerminal Finish: Matte Tin (Sn)Terminal Form: GULL WINGTerminal Position: DUALTime Small Signal Field-Effect Transistor, 0.2A I(D), 50V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3