#Powerex Inc, #C436N, #IGBT_Module, #IGBT, C436N Silicon Controlled Rectifier, 659.4A I(T)RMS, 450000mA I(T), 800V V(DRM), 800V V(RRM), 1 Element, T7H, 3 PIN; C436
Manufacturer Part Number: C436NPart Life Cycle Code: ActiveIhs Manufacturer: Powerex INCPackage Description: DISK BUTTON, O-CEDB-N2Pin Count: 3HTS Code: 8541.30.00.80Manufacturer: Powerex Power SemiconductorsRisk Rank: 5.67Additional Feature: FASTCircuit Commutated Turn-off Time-Nom: 30 µsConfiguration: SINGLECritical Rate of Rise of Off-State Voltage-Min: 200 V/usDC Gate Trigger Current-Max: 200 mADC Gate Trigger Voltage-Max: 3 VJESD-30 Code: O-CEDB-N2Leakage Current-Max: 45 mANon-Repetitive Pk On-state Cur: 5500 ANumber of Elements: 1Number of Terminals: 2On-state Current-Max: 450000 AOperating Temperature-Max: 125 °COperating Temperature-Min: -40 °CPackage Body Material: CERAMIC, METAL-SEALED COFIREDPackage Shape: ROUNDPackage Style: DISK BUTTONQualification Status: Not QualifiedRMS On-state Current-Max: 659.4 ARepetitive Peak Off-state Voltage: 800 VRepetitive Peak Reverse Voltage: 800 VSubcategory: Silicon Controlled RectifiersSurface Mount: YESTerminal Form: NO LEADTerminal Position: ENDTrigger Device Type: SCR Silicon Controlled Rectifier, 659.4A I(T)RMS, 450000mA I(T), 800V V(DRM), 800V V(RRM), 1 Element, T7H, 3 PIN