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MITSUBISHI CM100TU-12H

  • CM100TU-12H
  • CM100TU-12H Insulated Gate Bipolar Transistor, 100A I(C), 600V V(BR)CES, N-Channel,; CM100TU-12H

    · Categories: IGBT
    · Manufacturer: MITSUBISHI
    · Price:
    Price Range: US$ 50 - US$ 200 (Estimated)
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    · Date Code: Please Verify on Quote
    . Available Qty: 20
    MOQ: 1 PC
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    Content last revised on July 6, 2023

    Manufacturer Part Number: CM100TU-12HPbfree Code: NoPart Life Cycle Code: Not RecommendedIhs Manufacturer: Mitsubishi ELECTRIC CORPPackage Description: FLANGE MOUNT, R-XUFM-X17Manufacturer: Mitsubishi ElectricRisk Rank: 5.16Case Connection: ISOLATEDCollector Current-Max (IC): 100 ACollector-Emitter Voltage-Max: 600 VConfiguration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODEGate-Emitter Voltage-Max: 20 VJESD-30 Code: R-XUFM-X17Number of Elements: 6Number of Terminals: 17Operating Temperature-Max: 150 °CPackage Body Material: UNSPECIFIEDPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 400 WQualification Status: Not QualifiedSubcategory: Insulated Gate BIP TransistorsSurface Mount: NOTerminal Form: UNSPECIFIEDTerminal Position: UPPERTime Insulated Gate Bipolar Transistor, 100A I(C), 600V V(BR)CES, N-Channel,

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