DYNEX DIM600DDM12-E

  • DIM600DDM12-E

DIM600DDM12-E Insulated Gate Bipolar Transistor, 600A I(C), 1200V V(BR)CES, N-Channel, PLASTIC, D, 12 PIN; DIM600DDM12-E

· Categories: IGBT
· Manufacturer: DYNEX
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Price Range: US$ 50 - US$ 200 (Estimated)
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. Available Qty: 187
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Content last revised on December 5, 2023

Manufacturer Part Number: DIM600DDM12-E000Pbfree Code: YesPart Life Cycle Code: Contact ManufacturerIhs Manufacturer: DYNEX SEMICONDUCTOR LTDPackage Description: FLANGE MOUNT, R-PUFM-X12Pin Count: 12Manufacturer: Dynex SemiconductorRisk Rank: 5.73Additional Feature: HIGH RELIABILITYCase Connection: ISOLATEDCollector Current-Max (IC): 600 ACollector-Emitter Voltage-Max: 1200 VConfiguration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODEJESD-30 Code: R-PUFM-X12Number of Elements: 2Number of Terminals: 12Package Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELQualification Status: Not QualifiedSurface Mount: NOTerminal Form: UNSPECIFIEDTerminal Position: UPPERTime Insulated Gate Bipolar Transistor, 600A I(C), 1200V V(BR)CES, N-Channel, PLASTIC, D, 12 PIN

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