#DYNEX, #DIM600DDM17_A, #IGBT_Module, #IGBT, DIM600DDM17-A Insulated Gate Bipolar Transistor, 600A I(C), 1700V V(BR)CES, N-Channel, PLASTIC, D, 10 PIN; DIM600DDM17-A
Manufacturer Part Number: DIM600DDM17-A000Pbfree Code: YesPart Life Cycle Code: Contact ManufacturerIhs Manufacturer: DYNEX SEMICONDUCTOR LTDPackage Description: FLANGE MOUNT, R-PUFM-X10Pin Count: 10Manufacturer: Dynex SemiconductorRisk Rank: 5.68Case Connection: ISOLATEDCollector Current-Max (IC): 600 ACollector-Emitter Voltage-Max: 1700 VConfiguration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODEJESD-30 Code: R-PUFM-X10Number of Elements: 2Number of Terminals: 10Package Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELQualification Status: Not QualifiedSurface Mount: NOTerminal Form: UNSPECIFIEDTerminal Position: UPPERTime Insulated Gate Bipolar Transistor, 600A I(C), 1700V V(BR)CES, N-Channel, PLASTIC, D, 10 PIN