Diodes Inc DMN2300UFB4-7B IGBT Module

Manufacturer Part Number: DMN2300UFB4-7BPbfree Code: YesPart Life Cycle Code: ActiveIhs Manufacturer: DIODES INCPart Package Code: DFNPackage Description: CHIP CARRIER, R-PBCC-N3Pin Count: 3ECCN Code: EAR99Manufacturer: Diodes IncorporatedRisk Rank: 1.59Additional Feature: HIGH RELIABILITY, LOW THRESHOLDCase Connection: DRAINConfiguration: SINGLE WITH BUILT-IN DIODEDS Breakdown Voltage-Min: 20 VDrain Current-Max (Abs) (ID): 1.3 ADrain Current-Max (ID): 1.3 ADrain-source On Resistance-Max: 0.175 ΩFET Technology: METAL-OXIDE SEMICONDUCTORJESD-30 Code: R-PBCC-N3JESD-609 Code: e4Moisture Sensitivity Level: 1Number of Elements: 1Number of Terminals: 3Operating Mode: ENHANCEMENT MODEOperating Temperature-Max: 150 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: CHIP CARRIERPeak Reflow Temperature (Cel): 260Polarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 0.47 WQualification Status: Not QualifiedSubcategory: FET General Purpose PowersSurface Mount: YESTerminal Finish: Nickel/Palladium/Gold (Ni/Pd/Au)Terminal Form: NO LEADTerminal Position: BOTTOMTime Small Signal Field-Effect Transistor, 1.3A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, DFN1006H4-3, 3 PIN