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Diodes Inc DMN63D8LDW-13 IGBT Module

#Diodes Inc, #DMN63D8LDW_13, #IGBT_Module, #IGBT, DMN63D8LDW-13 Small Signal Field-Effect Transistor, 0.22A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semicond

· Categories: IGBT Module
· Manufacturer: Diodes Inc
· Price: US$
· Date Code: Lead free / RoHS Compliant
. Available Qty: 1929
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DMN63D8LDW-13 Specification

Sell DMN63D8LDW-13, #Diodes Inc #DMN63D8LDW-13 Stock, DMN63D8LDW-13 Small Signal Field-Effect Transistor, 0.22A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-6; DMN63D8LDW-13, #IGBT_Module, #IGBT, #DMN63D8LDW_13
Email: sales@shunlongwei.com
URL: https://www.slw-ele.com/dmn63d8ldw-13.html

Manufacturer Part Number: DMN63D8LDW-13Pbfree Code: YesPart Life Cycle Code: ActiveIhs Manufacturer: DIODES INCPackage Description: SMALL OUTLINE, R-PDSO-G6ECCN Code: EAR99Manufacturer: Diodes IncorporatedRisk Rank: 5.62Additional Feature: HIGH RELIABILITYConfiguration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODEDS Breakdown Voltage-Min: 30 VDrain Current-Max (ID): 0.22 ADrain-source On Resistance-Max: 4.5 ΩFET Technology: METAL-OXIDE SEMICONDUCTORJESD-30 Code: R-PDSO-G6JESD-609 Code: e3Moisture Sensitivity Level: 1Number of Elements: 2Number of Terminals: 6Operating Mode: ENHANCEMENT MODEPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: SMALL OUTLINEPeak Reflow Temperature (Cel): 260Polarity/Channel Type: N-CHANNELReference Standard: AEC-Q101Surface Mount: YESTerminal Finish: Matte Tin (Sn)Terminal Form: GULL WINGTerminal Position: DUALTime Small Signal Field-Effect Transistor, 0.22A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-6

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