#Diodes Inc, #DNBT8105_7, #IGBT_Module, #IGBT, DNBT8105-7 Small Signal Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, GREEN, PLASTIC PACKAGE-3; DN
Manufacturer Part Number: DNBT8105-7Pbfree Code: YesPart Life Cycle Code: ActiveIhs Manufacturer: DIODES INCPackage Description: SMALL OUTLINE, R-PDSO-G3Pin Count: 3ECCN Code: EAR99HTS Code: 8541.21.00.95Manufacturer: Diodes IncorporatedRisk Rank: 0.9Additional Feature: HIGH RELIABILITYCollector Current-Max (IC): 1 ACollector-Emitter Voltage-Max: 60 VConfiguration: SINGLEDC Current Gain-Min (hFE): 30JESD-30 Code: R-PDSO-G3JESD-609 Code: e3Moisture Sensitivity Level: 1Number of Elements: 1Number of Terminals: 3Operating Temperature-Max: 150 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: SMALL OUTLINEPeak Reflow Temperature (Cel): 260Polarity/Channel Type: NPNPower Dissipation-Max (Abs): 0.6 WQualification Status: Not QualifiedSubcategory: Other TransistorsSurface Mount: YESTerminal Finish: Matte Tin (Sn)Terminal Form: GULL WINGTerminal Position: DUALTime Small Signal Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, GREEN, PLASTIC PACKAGE-3