#DSIOBN, #DS60A, #IGBT_Module, #IGBT, DS60A TRANSISTOR 3000 mA, 80 V, PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal; DS60A
Manufacturer Part Number: BDS60A-TPart Life Cycle Code: ObsoleteIhs Manufacturer: NXP SEMICONDUCTORSPackage Description: SMALL OUTLINE, R-PDSO-G4ECCN Code: EAR99Manufacturer: NXP SemiconductorsRisk Rank: 5.79Additional Feature: BUILT-IN BIAS RESISTORCase Connection: COLLECTORCollector Current-Max (IC): 3 ACollector-Emitter Voltage-Max: 80 VConfiguration: DARLINGTON WITH BUILT-IN DIODE AND RESISTORDC Current Gain-Min (hFE): 1000JESD-30 Code: R-PDSO-G4Number of Elements: 1Number of Terminals: 4Package Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: SMALL OUTLINEPolarity/Channel Type: PNPQualification Status: Not QualifiedSurface Mount: YESTerminal Form: GULL WINGTerminal Position: DUALTransistor Application: SWITCHINGTransistor Element Material: SILICONTurn-off Time-Max (toff): 5000 nsTurn-on Time-Max (ton): 1500 ns TRANSISTOR 3000 mA, 80 V, PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal