#EPC, #EPC2001, #IGBT_Module, #IGBT, EPC2001 Power Field-Effect Transistor, 25A I(D), 100V, 0.007ohm, 1-Element, N-Channel, Gallium Nitride, Metal-oxide Semi
Manufacturer Part Number: EPC2001Rohs Code: YesPart Life Cycle Code: ObsoleteIhs Manufacturer: EFFICIENT POWER CONVERSION CORPPackage Description: UNCASED CHIP, R-XXUC-X11Manufacturer: Efficient Power ConversionRisk Rank: 7.93Additional Feature: ULTRA LOW RESISTANCEConfiguration: SINGLE WITH BUILT-IN DIODEDS Breakdown Voltage-Min: 100 VDrain Current-Max (Abs) (ID): 25 ADrain Current-Max (ID): 25 ADrain-source On Resistance-Max: 0.007 ΩFET Technology: METAL-OXIDE SEMICONDUCTORJESD-30 Code: R-XXUC-X11Number of Elements: 1Number of Terminals: 11Operating Mode: ENHANCEMENT MODEOperating Temperature-Max: 125 °CPackage Body Material: UNSPECIFIEDPackage Shape: RECTANGULARPackage Style: UNCASED CHIPPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELPulsed Drain Current-Max (IDM): 100 ASubcategory: FET General Purpose PowerTerminal Form: UNSPECIFIEDTerminal Position: UNSPECIFIEDTime Power Field-Effect Transistor, 25A I(D), 100V, 0.007ohm, 1-Element, N-Channel, Gallium Nitride, Metal-oxide Semiconductor FET, DIE-11