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EPC EPC2015

  • EPC2015

EPC2015 Power Field-Effect Transistor, 33A I(D), 40V, 0.004ohm, 1-Element, N-Channel, Gallium Nitride, Metal-oxide Semiconductor FET, DIE-11; EPC2015

· Categories: IGBT
· Manufacturer: EPC
· Price:
Price Range: US$ 50 - US$ 200 (Estimated)
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· Date Code: Please Verify on Quote
. Available Qty: 7059
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Content last revised on May 26, 2023

Manufacturer Part Number: EPC2015Rohs Code: YesPart Life Cycle Code: ObsoleteIhs Manufacturer: EFFICIENT POWER CONVERSION CORPPackage Description: UNCASED CHIP, R-XXUC-X11Manufacturer: Efficient Power ConversionRisk Rank: 5.75Additional Feature: ULTRA LOW RESISTANCEConfiguration: SINGLE WITH BUILT-IN DIODEDS Breakdown Voltage-Min: 40 VDrain Current-Max (Abs) (ID): 33 ADrain Current-Max (ID): 33 ADrain-source On Resistance-Max: 0.004 ΩFET Technology: METAL-OXIDE SEMICONDUCTORJESD-30 Code: R-XXUC-X11Number of Elements: 1Number of Terminals: 11Operating Mode: ENHANCEMENT MODEOperating Temperature-Max: 150 °CPackage Body Material: UNSPECIFIEDPackage Shape: RECTANGULARPackage Style: UNCASED CHIPPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELPulsed Drain Current-Max (IDM): 150 ASubcategory: FET General Purpose PowerTerminal Form: UNSPECIFIEDTerminal Position: UNSPECIFIEDTime Power Field-Effect Transistor, 33A I(D), 40V, 0.004ohm, 1-Element, N-Channel, Gallium Nitride, Metal-oxide Semiconductor FET, DIE-11