#EPC, #EPC2018, #IGBT_Module, #IGBT, EPC2018 Power Field-Effect Transistor, 12A I(D), 150V, 0.025ohm, 1-Element, N-Channel, Gallium Nitride, Metal-oxide Semi
Manufacturer Part Number: EPC2018Rohs Code: YesPart Life Cycle Code: ObsoleteIhs Manufacturer: EFFICIENT POWER CONVERSION CORPPackage Description: UNCASED CHIP, R-XXUC-X7ECCN Code: EAR99Manufacturer: Efficient Power ConversionRisk Rank: 5.83Additional Feature: ULTRA LOW RESISTANCEConfiguration: SINGLE WITH BUILT-IN DIODEDS Breakdown Voltage-Min: 150 VDrain Current-Max (ID): 12 ADrain-source On Resistance-Max: 0.025 ΩFET Technology: METAL-OXIDE SEMICONDUCTORJESD-30 Code: R-XXUC-X7Number of Elements: 1Number of Terminals: 7Operating Mode: ENHANCEMENT MODEPackage Body Material: UNSPECIFIEDPackage Shape: RECTANGULARPackage Style: UNCASED CHIPPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELPulsed Drain Current-Max (IDM): 60 ATerminal Form: UNSPECIFIEDTerminal Position: UNSPECIFIEDTime Power Field-Effect Transistor, 12A I(D), 150V, 0.025ohm, 1-Element, N-Channel, Gallium Nitride, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, DIE-7