FB180SA10
Features
Fully Isolated Package
Easy to Use and Parallel
Very Low On-Resistance
Dynamic dv/dt Rating
Fully Avalanche Rated
Simple Drive Requirements
Low Drain to Case Capacitance
Low Internal Inductance
Description
Fifth Generation,high current density HEXFETS are paralled into a compact, high power module providing
the best combination of switching, ruggedized design,very low ON resistance and cost effectiveness.
The isolated SOT-227 package is preferred for all commercial - industrial applications at power
dissipation levels to approximately 500 watts.The low thermal resistance and easy connection to the SOT-227 package contribute to its universal acceptance throughout the industry.
Manufacturer: Vishay
Product Category: MOSFET
Id - Continuous Drain Current: 180 A
Vds - Drain-Source Breakdown Voltage: 100 V
Rds On - Drain-Source Resistance: 6.5 mOhms
Transistor Polarity: N-Channel
Vgs - Gate-Source Breakdown Voltage: 20 V
Maximum Operating Temperature: + 150 C
Pd - Power Dissipation: 480 W
Mounting Style: SMD/SMT
Package / Case: SOT-227
Packaging: Bulk
Brand: Vishay / Siliconix
Channel Mode: Enhancement
Configuration: Single Dual Source
Fall Time: 335 ns
Minimum Operating Temperature: -55 to + 150 °C
Isolation Voltage VIsol (AC 1 minute) :2500V
Mounting screw torque 1.3 N·m
Rise Time: 351 ns
Typical Turn-Off Delay Time: 181 ns
Typical Turn-On Delay Time: 45 ns
