Vishay FB180SA10 IGBT Module

FB180SA10

Features

Fully Isolated Package

Easy to Use and Parallel

Very Low On-Resistance

Dynamic dv/dt Rating

Fully Avalanche Rated

Simple Drive Requirements

Low Drain to Case Capacitance

Low Internal Inductance

Description

Fifth Generation,high current density HEXFETS are paralled into a compact, high power module providing

the best combination of switching, ruggedized design,very low ON resistance and cost effectiveness.

The isolated SOT-227 package is preferred for all commercial - industrial applications at power

dissipation levels to approximately 500 watts.The low thermal resistance and easy connection to the SOT-227 package contribute to its universal acceptance throughout the industry.

Manufacturer: Vishay

Product Category: MOSFET

Id - Continuous Drain Current: 180 A

Vds - Drain-Source Breakdown Voltage: 100 V

Rds On - Drain-Source Resistance: 6.5 mOhms

Transistor Polarity: N-Channel

Vgs - Gate-Source Breakdown Voltage: 20 V

Maximum Operating Temperature: + 150 C

Pd - Power Dissipation: 480 W

Mounting Style: SMD/SMT

Package / Case: SOT-227

Packaging: Bulk

Brand: Vishay / Siliconix

Channel Mode: Enhancement

Configuration: Single Dual Source

Fall Time: 335 ns

Minimum Operating Temperature: -55 to + 150 °C

Isolation Voltage VIsol (AC 1 minute) :2500V

Mounting screw torque 1.3 N·m

Rise Time: 351 ns

Typical Turn-Off Delay Time: 181 ns

Typical Turn-On Delay Time: 45 ns