Vishay FB180SA10 New IGBT Module

FB180SA10
Manufacturer: Vishay
Product Category: MOSFET
Id - Continuous Drain Current: 180 A
Vds - Drain-Source Breakdown Voltage: 100 V
Rds On - Drain-Source Resistance: 6.5 mOhms
Transistor Polarity: N-Channel
Vgs - Gate-Source Breakdown Voltage: 20 V
Maximum Operating Temperature: + 150 C
Pd - Power Dissipation: 480 W
Mounting Style: SMD/SMT
Package / Case: SOT-227-4
Packaging: Bulk
Brand: Vishay / Siliconix
Channel Mode: Enhancement
Configuration: Single Dual Source
Fall Time: 335 ns
Minimum Operating Temperature: - 55 C
Rise Time: 351 ns
Typical Turn-Off Delay Time: 181 ns
Typical Turn-On Delay Time: 45 ns
MOSFET 100V Single N-Channel HEXFET Power MOSFET SOT-227 (Iso)