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Fairchild Semiconductor FDG6301N

  • FDG6301N
  • FDG6301N Dual N-Channel Digital FET 25 V, 0.22 A, 4 Ω, 3000-REEL; FDG6301N

    · Categories: IGBT
    · Manufacturer: Fairchild Semiconductor
    · Price:
    Price Range: US$ 50 - US$ 200 (Estimated)
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    · Date Code: Please Verify on Quote
    . Available Qty: 89
    MOQ: 1 PC
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    Content last revised on July 23, 2023

    Manufacturer Part Number: FDG6301NBrand Name: ON SemiconductorPbfree Code: ActiveIhs Manufacturer: ON SEMICONDUCTORPackage Description: SMALL OUTLINE, R-PDSO-G6Manufacturer Package Code: 419ADECCN Code: EAR99HTS Code: 8541.21.00.95Manufacturer: ON SemiconductorRisk Rank: 0.7Additional Feature: LOGIC LEVEL COMPATIBLEConfiguration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODEDS Breakdown Voltage-Min: 25 VDrain Current-Max (ID): 0.22 ADrain-source On Resistance-Max: 4 ΩFET Technology: METAL-OXIDE SEMICONDUCTORJESD-30 Code: R-PDSO-G6JESD-609 Code: e3Moisture Sensitivity Level: 1Number of Elements: 2Number of Terminals: 6Operating Mode: ENHANCEMENT MODEOperating Temperature-Max: 150 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: SMALL OUTLINEPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 0.3 WQualification Status: Not QualifiedSubcategory: FET General Purpose PowerSurface Mount: YESTerminal Finish: Tin (Sn)Terminal Form: GULL WINGTerminal Position: DUALTime Dual N-Channel Digital FET 25 V, 0.22 A, 4 Ω, 3000-REEL

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