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Fairchild Semiconductor FDMC86102LZ

  • FDMC86102LZ
  • FDMC86102LZ N-Channel Shielded Gate Power Trench® MOSFET 100V, 22A, 24mΩ, 3000-REEL; FDMC86102LZ

    · Categories: IGBT
    · Manufacturer: Fairchild Semiconductor
    · Price:
    Price Range: US$ 50 - US$ 200 (Estimated)
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    · Date Code: Please Verify on Quote
    . Available Qty: 6073
    MOQ: 1 PC
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    Content last revised on November 28, 2023

    Manufacturer Part Number: FDMC86102LZBrand Name: ON SemiconductorPbfree Code: ActiveIhs Manufacturer: ON SEMICONDUCTORPackage Description: SMALL OUTLINE, S-PDSO-N5Manufacturer Package Code: 511DHECCN Code: EAR99HTS Code: 8541.29.00.95Manufacturer: ON SemiconductorRisk Rank: 0.89Additional Feature: LOGIC LEVEL COMPATIBLEAvalanche Energy Rating (Eas): 84 mJCase Connection: DRAINConfiguration: SINGLE WITH BUILT-IN DIODEDS Breakdown Voltage-Min: 100 VDrain Current-Max (Abs) (ID): 22 ADrain Current-Max (ID): 7 ADrain-source On Resistance-Max: 0.024 ΩFET Technology: METAL-OXIDE SEMICONDUCTORJESD-30 Code: S-PDSO-N5JESD-609 Code: e3Moisture Sensitivity Level: 1Number of Elements: 1Number of Terminals: 5Operating Mode: ENHANCEMENT MODEOperating Temperature-Max: 150 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: SQUAREPackage Style: SMALL OUTLINEPeak Reflow Temperature (Cel): 260Polarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 41 WPulsed Drain Current-Max (IDM): 30 AQualification Status: Not QualifiedSubcategory: FET General Purpose PowerSurface Mount: YESTerminal Finish: TINTerminal Form: NO LEADTerminal Position: DUALTime N-Channel Shielded Gate Power Trench® MOSFET 100V, 22A, 24mΩ, 3000-REEL