Fairchild Semiconductor FDMS86150 IGBT Module

Manufacturer Part Number: FDMS86150Brand Name: ON SemiconductorPbfree Code: ActiveIhs Manufacturer: ON SEMICONDUCTORPackage Description: SMALL OUTLINE, R-PDSO-N5Manufacturer Package Code: 483AGECCN Code: EAR99HTS Code: 8541.29.00.95Manufacturer: ON SemiconductorRisk Rank: 5.26Avalanche Energy Rating (Eas): 726 mJCase Connection: DRAINConfiguration: SINGLE WITH BUILT-IN DIODEDS Breakdown Voltage-Min: 100 VDrain Current-Max (Abs) (ID): 60 ADrain Current-Max (ID): 16 ADrain-source On Resistance-Max: 0.00485 ΩFET Technology: METAL-OXIDE SEMICONDUCTORJEDEC-95 Code: MO-240AAJESD-30 Code: R-PDSO-N5JESD-609 Code: e3Moisture Sensitivity Level: 1Number of Elements: 1Number of Terminals: 5Operating Mode: ENHANCEMENT MODEOperating Temperature-Max: 150 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: SMALL OUTLINEPeak Reflow Temperature (Cel): 260Polarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 156 WPulsed Drain Current-Max (IDM): 300 ASubcategory: FET General Purpose PowerSurface Mount: YESTerminal Finish: TINTerminal Form: NO LEADTerminal Position: DUALTime N-Channel Shielded Gate PowerTrench® MOSFET 100V, 80A, 4.85mΩ, 3000-REEL