Fairchild Semiconductor FDMS86252 IGBT Module

Manufacturer Part Number: FDMS86252Brand Name: ON SemiconductorPbfree Code: ActiveIhs Manufacturer: ON SEMICONDUCTORPackage Description: SMALL OUTLINE, R-PDSO-F5Manufacturer Package Code: 483AEECCN Code: EAR99HTS Code: 8541.29.00.95Manufacturer: ON SemiconductorRisk Rank: 1.47Avalanche Energy Rating (Eas): 50 mJCase Connection: DRAINConfiguration: SINGLE WITH BUILT-IN DIODEDS Breakdown Voltage-Min: 150 VDrain Current-Max (Abs) (ID): 16 ADrain Current-Max (ID): 4.6 ADrain-source On Resistance-Max: 0.051 ΩFET Technology: METAL-OXIDE SEMICONDUCTORJEDEC-95 Code: MO-240AAJESD-30 Code: R-PDSO-F5JESD-609 Code: e3Moisture Sensitivity Level: 1Number of Elements: 1Number of Terminals: 5Operating Mode: ENHANCEMENT MODEOperating Temperature-Max: 150 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: SMALL OUTLINEPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 69 WPulsed Drain Current-Max (IDM): 20 AQualification Status: Not QualifiedSubcategory: FET General Purpose PowerSurface Mount: YESTerminal Finish: Tin (Sn)Terminal Form: FLATTerminal Position: DUALTime N-Channel Shielded Gate PowerTrench® MOSFET 150V, 16A, 51mΩ, 3000-REEL