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Fairchild Semiconductor FDS89161 IGBT Module

#Fairchild Semiconductor, #FDS89161, #IGBT_Module, #IGBT, FDS89161 Dual N-Channel Shielded Gate PowerTrench® MOSFET 100V, 2.7A, 105mΩ, 2500-REEL; FDS89161

· Categories: IGBT Module
· Manufacturer: Fairchild Semiconductor
· Price: US$
· Date Code: Lead free / RoHS Compliant
. Available Qty: 80
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FDS89161 Specification

Sell FDS89161, #Fairchild Semiconductor #FDS89161 Stock, FDS89161 Dual N-Channel Shielded Gate PowerTrench® MOSFET 100V, 2.7A, 105mΩ, 2500-REEL; FDS89161, #IGBT_Module, #IGBT, #FDS89161
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URL: https://www.slw-ele.com/fds89161.html

Manufacturer Part Number: FDS89161Brand Name: ON SemiconductorPbfree Code: ActiveIhs Manufacturer: ON SEMICONDUCTORPackage Description: SMALL OUTLINE, R-PDSO-G8Manufacturer Package Code: 751EBECCN Code: EAR99HTS Code: 8541.29.00.95Manufacturer: ON SemiconductorRisk Rank: 0.94Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODEDS Breakdown Voltage-Min: 100 VDrain Current-Max (Abs) (ID): 2.7 ADrain Current-Max (ID): 2.7 ADrain-source On Resistance-Max: 0.105 ΩFET Technology: METAL-OXIDE SEMICONDUCTORFeedback Cap-Max (Crss): 5 pFJESD-30 Code: R-PDSO-G8Moisture Sensitivity Level: 1Number of Elements: 2Number of Terminals: 8Operating Mode: ENHANCEMENT MODEOperating Temperature-Max: 150 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: SMALL OUTLINEPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 3.1 WQualification Status: Not QualifiedSubcategory: FET General Purpose PowerSurface Mount: YESTerminal Form: GULL WINGTerminal Position: DUALTime Dual N-Channel Shielded Gate PowerTrench® MOSFET 100V, 2.7A, 105mΩ, 2500-REEL

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