#EUPEC, #FS30R06VE3, #IGBT_Module, #IGBT, FS30R06VE3 Insulated Gate Bipolar Transistor, 34A I(C), 600V V(BR)CES, N-Channel, MODULE-13; FS30R06VE3
Manufacturer Part Number: FS30R06VE3Pbfree Code: YesPart Life Cycle Code: Not RecommendedIhs Manufacturer: Infineon TECHNOLOGIES AGPart Package Code: MODULEPackage Description: FLANGE MOUNT, R-XUFM-X13Pin Count: 13ECCN Code: EAR99Manufacturer: Infineon Technologies AGRisk Rank: 5.05Case Connection: ISOLATEDCollector Current-Max (IC): 34 ACollector-Emitter Voltage-Max: 600 VConfiguration: COMPLEXGate-Emitter Voltage-Max: 20 VJESD-30 Code: R-XUFM-X13Number of Elements: 6Number of Terminals: 13Operating Temperature-Max: 175 °CPackage Body Material: UNSPECIFIEDPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 88 WQualification Status: Not QualifiedSubcategory: Insulated Gate BIP TransistorsSurface Mount: NOTerminal Form: UNSPECIFIEDTerminal Position: UPPERTime Insulated Gate Bipolar Transistor, 34A I(C), 600V V(BR)CES, N-Channel, MODULE-13