#GeneSiC Semiconductor, #GA35XCP12_247, #IGBT_Module, #IGBT, GA35XCP12-247 Insulated Gate Bipolar Transistor, 35A I(C), 1200V V(BR)CES, N-Channel; GA35XCP12-247
Manufacturer Part Number: GA35XCP12-247Rohs Code: YesPart Life Cycle Code: Contact ManufacturerIhs Manufacturer: GENESIC SEMICONDUCTOR INCPackage Description: ,Manufacturer: GeneSic Semiconductor IncRisk Rank: 5.73Collector Current-Max (IC): 35 ACollector-Emitter Voltage-Max: 1200 VGate-Emitter Thr Voltage-Max: 6.5 VGate-Emitter Voltage-Max: 20 VOperating Temperature-Max: 150 °CPolarity/Channel Type: N-CHANNELSubcategory: Insulated Gate BIP TransistorsSurface Mount: NO Insulated Gate Bipolar Transistor, 35A I(C), 1200V V(BR)CES, N-Channel