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IR GB10XF120K New IGBT Module

#IR, #GB10XF120K, #IGBT_Module, #IGBT, GB10XF120K Insulated Gate Bipolar Transistor, 20A I(C), 1200V V(BR)CES, N-Channel, LEAD FREE, ECONO26PACK-17; GB10XF120K

· Categories: IGBT Module
· Manufacturer: IR
· Price: US$
· Date Code: 11+
. Available Qty: 445
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GB10XF120K Specification

Sell GB10XF120K, #IR #GB10XF120K New Stock, GB10XF120K Insulated Gate Bipolar Transistor, 20A I(C), 1200V V(BR)CES, N-Channel, LEAD FREE, ECONO26PACK-17; GB10XF120K, #IGBT_Module, #IGBT, #GB10XF120K
Email: sales@shunlongwei.com
URL: https://www.slw-ele.com/gb10xf120k.html

Manufacturer Part Number: GB10XF120KRohs Code: YesPart Life Cycle Code: ObsoleteIhs Manufacturer: VISHAY INTERTECHNOLOGY INCPackage Description: LEAD FREE, ECONO26PACK-17Pin Count: 17ECCN Code: EAR99Manufacturer: Vishay IntertechnologiesRisk Rank: 5.84Additional Feature: UL RECOGNIZEDCase Connection: ISOLATEDCollector Current-Max (IC): 20 ACollector-Emitter Voltage-Max: 1200 VConfiguration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODEGate-Emitter Voltage-Max: 20 VJESD-30 Code: R-XUFM-X17JESD-609 Code: e3Number of Elements: 6Number of Terminals: 17Operating Temperature-Max: 150 °CPackage Body Material: UNSPECIFIEDPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPeak Reflow Temperature (Cel): NOT APPLICABLEPolarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 151 WQualification Status: Not QualifiedSubcategory: Insulated Gate BIP TransistorsSurface Mount: NOTerminal Finish: MATTE TIN OVER NICKEL (197)Terminal Form: UNSPECIFIEDTerminal Position: UPPERTime Insulated Gate Bipolar Transistor, 20A I(C), 1200V V(BR)CES, N-Channel, LEAD FREE, ECONO26PACK-17

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