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Infineon Technologies IKA08N65F5XKSA1

  • IKA08N65F5XKSA1

IKA08N65F5XKSA1 Insulated Gate Bipolar Transistor, 10.8A I(C), 650V V(BR)CES, N-Channel,; IKA08N65F5XKSA1

· Categories: IGBT
· Manufacturer: Infineon Technologies
· Price:
Price Range: US$ 50 - US$ 200 (Estimated)
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· Date Code: Please Verify on Quote
. Available Qty: 1465
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Content last revised on July 19, 2023

Manufacturer Part Number: IKA08N65F5XKSA1Pbfree Code: YesPart Life Cycle Code: ActiveIhs Manufacturer: Infineon TECHNOLOGIES AGECCN Code: EAR99Manufacturer: Infineon Technologies AGRisk Rank: 2.13Collector Current-Max (IC): 10.8 ACollector-Emitter Voltage-Max: 650 VGate-Emitter Thr Voltage-Max: 4.8 VGate-Emitter Voltage-Max: 20 VJESD-609 Code: e3Operating Temperature-Max: 175 °CPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 31.2 WSubcategory: Insulated Gate BIP TransistorsSurface Mount: NOTerminal Finish: Tin (Sn)Time Insulated Gate Bipolar Transistor, 10.8A I(C), 650V V(BR)CES, N-Channel,