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Infineon Technologies IKD10N60RF

  • IKD10N60RF
  • IKD10N60RF Insulated Gate Bipolar Transistor,; IKD10N60RF

    · Categories: IGBT
    · Manufacturer: Infineon Technologies
    · Price:
    Price Range: US$ 50 - US$ 200 (Estimated)
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    · Date Code: Please Verify on Quote
    . Available Qty: 1189
    MOQ: 1 PC
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    Content last revised on July 27, 2023

    Manufacturer Part Number: IKD10N60RFPbfree Code: YesPart Life Cycle Code: ActiveIhs Manufacturer: Infineon TECHNOLOGIES AGPackage Description: SMALL OUTLINE, R-PSSO-G2ECCN Code: EAR99Manufacturer: Infineon Technologies AGRisk Rank: 2.1Case Connection: COLLECTORCollector Current-Max (IC): 20 ACollector-Emitter Voltage-Max: 600 VConfiguration: SINGLE WITH BUILT-IN DIODEGate-Emitter Thr Voltage-Max: 5.7 VGate-Emitter Voltage-Max: 20 VJEDEC-95 Code: TO-252JESD-30 Code: R-PSSO-G2Number of Elements: 1Number of Terminals: 2Operating Temperature-Max: 175 °COperating Temperature-Min: -40 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: SMALL OUTLINEPolarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 150 WSurface Mount: YESTerminal Form: GULL WINGTerminal Position: SINGLETransistor Application: POWER CONTROLTransistor Element Material: SILICONTurn-off Time-Nom (toff): 186 nsTurn-on Time-Nom (ton): 27 nsVCEsat-Max: 2.5 V Insulated Gate Bipolar Transistor,

    v1.2.0