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International Rectifier IRF2807PBF

  • IRF2807PBF

IRF2807PBF Power Field-Effect Transistor, 75A I(D), 75V, 0.013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, PLASTIC PACKAGE-3; IRF2807PBF

· Categories: IGBT
· Manufacturer: International Rectifier
· Price:
Price Range: US$ 50 - US$ 200 (Estimated)
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· Date Code: Please Verify on Quote
. Available Qty: 1485
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Content last revised on July 4, 2023

Manufacturer Part Number: IRF2807PBFRohs Code: YesPart Life Cycle Code: ActiveIhs Manufacturer: Infineon TECHNOLOGIES AGPackage Description: FLANGE MOUNT, R-PSFM-T3ECCN Code: EAR99Manufacturer: Infineon Technologies AGRisk Rank: 0.74Additional Feature: AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCEAvalanche Energy Rating (Eas): 340 mJCase Connection: DRAINConfiguration: SINGLE WITH BUILT-IN DIODEDS Breakdown Voltage-Min: 75 VDrain Current-Max (Abs) (ID): 82 ADrain Current-Max (ID): 75 ADrain-source On Resistance-Max: 0.013 ΩFET Technology: METAL-OXIDE SEMICONDUCTORJEDEC-95 Code: TO-220ABJESD-30 Code: R-PSFM-T3JESD-609 Code: e3Number of Elements: 1Number of Terminals: 3Operating Mode: ENHANCEMENT MODEOperating Temperature-Max: 175 °COperating Temperature-Min: -55 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPeak Reflow Temperature (Cel): 250Polarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 230 WPulsed Drain Current-Max (IDM): 280 AQualification Status: Not QualifiedSubcategory: FET General Purpose PowerSurface Mount: NOTerminal Finish: Matte Tin (Sn) - with Nickel (Ni) barrierTerminal Form: THROUGH-HOLETerminal Position: SINGLETime Power Field-Effect Transistor, 75A I(D), 75V, 0.013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, PLASTIC PACKAGE-3