#Vishay Siliconix, #IRF530STRLPBF, #IGBT_Module, #IGBT, IRF530STRLPBF Power Field-Effect Transistor, 14A I(D), 100V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semicon
Manufacturer Part Number: IRF530STRLPBFPbfree Code: YesPart Life Cycle Code: ActiveIhs Manufacturer: VISHAY INTERTECHNOLOGY INCPackage Description: SMALL OUTLINE, R-PSSO-G2Pin Count: 3ECCN Code: EAR99Manufacturer: Vishay IntertechnologiesRisk Rank: 0.56Avalanche Energy Rating (Eas): 69 mJCase Connection: DRAINConfiguration: SINGLE WITH BUILT-IN DIODEDS Breakdown Voltage-Min: 100 VDrain Current-Max (Abs) (ID): 14 ADrain Current-Max (ID): 14 ADrain-source On Resistance-Max: 0.16 ΩFET Technology: METAL-OXIDE SEMICONDUCTORJESD-30 Code: R-PSSO-G2JESD-609 Code: e3Moisture Sensitivity Level: 1Number of Elements: 1Number of Terminals: 2Operating Mode: ENHANCEMENT MODEOperating Temperature-Max: 175 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: SMALL OUTLINEPeak Reflow Temperature (Cel): 260Polarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 88 WPulsed Drain Current-Max (IDM): 56 AQualification Status: Not QualifiedSubcategory: FET General Purpose PowersSurface Mount: YESTerminal Finish: Matte Tin (Sn)Terminal Form: GULL WINGTerminal Position: SINGLETime Power Field-Effect Transistor, 14A I(D), 100V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, SMD-220, D2PAK-3