#International Rectifier, #IRF9389TRPBF, #IGBT_Module, #IGBT, IRF9389TRPBF Power Field-Effect Transistor, 6.8A I(D), 30V, 0.027ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal
Manufacturer Part Number: IRF9389TRPBFRohs Code: YesPart Life Cycle Code: ActiveIhs Manufacturer: Infineon TECHNOLOGIES AGPackage Description: SMALL OUTLINE, R-PDSO-G8ECCN Code: EAR99Manufacturer: Infineon Technologies AGRisk Rank: 1.07Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODEDS Breakdown Voltage-Min: 30 VDrain Current-Max (Abs) (ID): 6.8 ADrain Current-Max (ID): 6.8 ADrain-source On Resistance-Max: 0.027 ΩFET Technology: METAL-OXIDE SEMICONDUCTORJEDEC-95 Code: MS-012AAJESD-30 Code: R-PDSO-G8Moisture Sensitivity Level: 1Number of Elements: 2Number of Terminals: 8Operating Mode: ENHANCEMENT MODEOperating Temperature-Max: 150 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: SMALL OUTLINEPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNEL AND P-CHANNELPower Dissipation-Max (Abs): 2 WPulsed Drain Current-Max (IDM): 34 ASubcategory: Other TransistorsSurface Mount: YESTerminal Form: GULL WINGTerminal Position: DUALTime Power Field-Effect Transistor, 6.8A I(D), 30V, 0.027ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-Oxide Semiconductor FET, MS-012AA, HALOGEN FREE AND ROHS COMPLIANT, SOP-8