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IR IRG4BC20KDPBF

  • IRG4BC20KDPBF

IRG4BC20KDPBF Insulated Gate Bipolar Transistor, 16A I(C), 600V V(BR)CES, N-Channel, TO-220AB, LEAD FREE PACKAGE-3

· Categories: IGBT
· Manufacturer: IR
· Price:
Price Range: US$ 50 - US$ 200 (Estimated)
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· Date Code: Please Verify on Quote
. Available Qty: 1839
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Content last revised on April 27, 2024

Manufacturer Part Number: IRG4BC20KDPBF
Package Description: FLANGE MOUNT, R-PSFM-T3
ECCN Code: EAR99
Manufacturer: Infineon Technologies AG
Case Connection: COLLECTOR
Collector Current-Max (IC): 16 A
Collector-Emitter Voltage-Max: 600 V
Configuration: SINGLE WITH BUILT-IN DIODE
Fall Time-Max (tf): 110 ns
Gate-Emitter Thr Voltage-Max: 6 V
Gate-Emitter Voltage-Max: 20 V
JEDEC-95 Code: TO-220AB
JESD-30 Code: R-PSFM-T3
Number of Elements: 1
Number of Terminals: 3
Operating Temperature-Max: 150 °C
Package Body Material: PLASTIC/EPOXY
Package Shape: RECTANGULAR
Package Style: FLANGE MOUNT
Peak Reflow Temperature (Cel): NOT SPECIFIED
Polarity/Channel Type: N-CHANNEL
Power Dissipation-Max (Abs): 60 W
Qualification Status: Not Qualified
Subcategory: Insulated Gate BIP Transistors
Surface Mount: NO
Terminal Form: THROUGH-HOLE
Terminal Position: SINGLE
Time
Insulated Gate Bipolar Transistor, 16A I(C), 600V V(BR)CES, N-Channel, TO-220AB, LEAD FREE PACKAGE-3