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IR IRG4BC20KDPBF

  • IRG4BC20KDPBF
  • IRG4BC20KDPBF Insulated Gate Bipolar Transistor, 16A I(C), 600V V(BR)CES, N-Channel, TO-220AB, LEAD FREE PACKAGE-3

    · Categories: IGBT
    · Manufacturer: IR
    · Price:
    Price Range: US$ 50 - US$ 200 (Estimated)
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    · Date Code: Please Verify on Quote
    . Available Qty: 1839
    MOQ: 1 PC
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    Content last revised on April 27, 2024

    Manufacturer Part Number: IRG4BC20KDPBF
    Package Description: FLANGE MOUNT, R-PSFM-T3
    ECCN Code: EAR99
    Manufacturer: Infineon Technologies AG
    Case Connection: COLLECTOR
    Collector Current-Max (IC): 16 A
    Collector-Emitter Voltage-Max: 600 V
    Configuration: SINGLE WITH BUILT-IN DIODE
    Fall Time-Max (tf): 110 ns
    Gate-Emitter Thr Voltage-Max: 6 V
    Gate-Emitter Voltage-Max: 20 V
    JEDEC-95 Code: TO-220AB
    JESD-30 Code: R-PSFM-T3
    Number of Elements: 1
    Number of Terminals: 3
    Operating Temperature-Max: 150 °C
    Package Body Material: PLASTIC/EPOXY
    Package Shape: RECTANGULAR
    Package Style: FLANGE MOUNT
    Peak Reflow Temperature (Cel): NOT SPECIFIED
    Polarity/Channel Type: N-CHANNEL
    Power Dissipation-Max (Abs): 60 W
    Qualification Status: Not Qualified
    Subcategory: Insulated Gate BIP Transistors
    Surface Mount: NO
    Terminal Form: THROUGH-HOLE
    Terminal Position: SINGLE
    Time
    Insulated Gate Bipolar Transistor, 16A I(C), 600V V(BR)CES, N-Channel, TO-220AB, LEAD FREE PACKAGE-3

    v1.2.1