Content last revised on May 24, 2023
Manufacturer Part Number: IRGB5B120KDPBFRohs Code: YesPart Life Cycle Code: ObsoleteIhs Manufacturer: Infineon TECHNOLOGIES AGPackage Description: LEAD FREE PACKAGE-3ECCN Code: EAR99Manufacturer: Infineon Technologies AGRisk Rank: 5.78Case Connection: COLLECTORCollector Current-Max (IC): 12 ACollector-Emitter Voltage-Max: 1200 VConfiguration: SINGLE WITH BUILT-IN DIODEFall Time-Max (tf): 29 nsGate-Emitter Thr Voltage-Max: 6 VGate-Emitter Voltage-Max: 20 VJEDEC-95 Code: TO-220ABJESD-30 Code: R-PSFM-T3Number of Elements: 1Number of Terminals: 3Operating Temperature-Max: 150 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 89 WQualification Status: Not QualifiedRise Time-Max (tr): 27 nsSubcategory: Insulated Gate BIP TransistorsSurface Mount: NOTerminal Form: THROUGH-HOLETerminal Position: SINGLETime Insulated Gate Bipolar Transistor, 12A I(C), 1200V V(BR)CES, N-Channel, TO-220AB, LEAD FREE PACKAGE-3