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IXYS IXA70I1200NA

  • IXA70I1200NA

IXA70I1200NA Insulated Gate Bipolar Transistor, 100A I(C), 1200V V(BR)CES, N-Channel, ROHS COMPLIANT, PLASTIC, MINIBLOC-4; IXA70I1200NA

· Categories: IGBT
· Manufacturer: IXYS
· Price:
Price Range: US$ 50 - US$ 200 (Estimated)
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· Date Code: Please Verify on Quote
. Available Qty: 1721
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Content last revised on June 29, 2023

Manufacturer Part Number: IXA70I1200NARohs Code: YesPart Life Cycle Code: ActiveIhs Manufacturer: IXYS CORPPackage Description: FLANGE MOUNT, R-PUFM-X4Pin Count: 4ECCN Code: EAR99Manufacturer: IXYS CorporationRisk Rank: 5.68Additional Feature: UL RECOGNIZEDCase Connection: ISOLATEDCollector Current-Max (IC): 100 ACollector-Emitter Voltage-Max: 1200 VConfiguration: SINGLEGate-Emitter Voltage-Max: 20 VJESD-30 Code: R-PUFM-X4Number of Elements: 1Number of Terminals: 4Operating Temperature-Max: 150 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 350 WSubcategory: Insulated Gate BIP TransistorsSurface Mount: NOTerminal Form: UNSPECIFIEDTerminal Position: UPPERTime Insulated Gate Bipolar Transistor, 100A I(C), 1200V V(BR)CES, N-Channel, ROHS COMPLIANT, PLASTIC, MINIBLOC-4

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