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IXYS IXFH12N100 New IGBT Module

#IXYS, #IXFH12N100, #IGBT_Module, #IGBT, IXFH12N100 Power Field-Effect Transistor, 12A I(D), 1000V, 1.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semicondu

· Categories: IGBT Module
· Manufacturer: IXYS
· Price: US$
· Date Code: Lead free / RoHS Compliant
. Available Qty: 1252
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IXFH12N100 Specification

Sell IXFH12N100, #IXYS #IXFH12N100 New Stock, IXFH12N100 Power Field-Effect Transistor, 12A I(D), 1000V, 1.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247AD, 3 PIN; IXFH12N100, #IGBT_Module, #IGBT, #IXFH12N100
Email: sales@shunlongwei.com
URL: https://www.slw-ele.com/ixfh12n100.html

Manufacturer Part Number: IXFH12N100Pbfree Code: YesPart Life Cycle Code: Not RecommendedIhs Manufacturer: IXYS CORPPart Package Code: TO-247ADPackage Description: FLANGE MOUNT, R-PSFM-T3Pin Count: 3ECCN Code: EAR99HTS Code: 8541.29.00.95Manufacturer: IXYS CorporationRisk Rank: 7.23Additional Feature: AVALANCHE RATEDCase Connection: DRAINConfiguration: SINGLE WITH BUILT-IN DIODEDS Breakdown Voltage-Min: 1000 VDrain Current-Max (Abs) (ID): 12 ADrain Current-Max (ID): 12 ADrain-source On Resistance-Max: 1.05 ΩFET Technology: METAL-OXIDE SEMICONDUCTORJEDEC-95 Code: TO-247ADJESD-30 Code: R-PSFM-T3Number of Elements: 1Number of Terminals: 3Operating Mode: ENHANCEMENT MODEOperating Temperature-Max: 150 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELPower Dissipation Ambient-Max: 300 WPower Dissipation-Max (Abs): 300 WPulsed Drain Current-Max (IDM): 48 AQualification Status: Not QualifiedSubcategory: FET General Purpose PowerSurface Mount: NOTerminal Form: THROUGH-HOLETerminal Position: SINGLETime Power Field-Effect Transistor, 12A I(D), 1000V, 1.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247AD, 3 PIN

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