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IXYS IXGA30N120B3

  • IXGA30N120B3
  • IXGA30N120B3 Insulated Gate Bipolar Transistor, 60A I(C), 1200V V(BR)CES, N-Channel, TO-263AB, PLASTIC, TO-263, 3 PIN; IXGA30N120B3

    · Categories: IGBT
    · Manufacturer: IXYS
    · Price:
    Price Range: US$ 50 - US$ 200 (Estimated)
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    · Date Code: Please Verify on Quote
    . Available Qty: 1778
    MOQ: 1 PC
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    Content last revised on August 21, 2023

    Manufacturer Part Number: IXGA30N120B3Pbfree Code: YesPart Life Cycle Code: ActiveIhs Manufacturer: IXYS CORPPart Package Code: D2PAKPackage Description: PLASTIC, TO-263, 3 PINPin Count: 4ECCN Code: EAR99Manufacturer: IXYS CorporationRisk Rank: 2.25Additional Feature: LOW CONDUCTION LOSSCase Connection: COLLECTORCollector Current-Max (IC): 60 ACollector-Emitter Voltage-Max: 1200 VConfiguration: SINGLEFall Time-Max (tf): 380 nsGate-Emitter Thr Voltage-Max: 5 VGate-Emitter Voltage-Max: 20 VJEDEC-95 Code: TO-263ABJESD-30 Code: R-PSSO-G2JESD-609 Code: e3Moisture Sensitivity Level: 2Number of Elements: 1Number of Terminals: 2Operating Temperature-Max: 150 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: SMALL OUTLINEPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 300 WQualification Status: Not QualifiedSubcategory: Insulated Gate BIP TransistorsSurface Mount: YESTerminal Finish: Matte Tin (Sn)Terminal Form: GULL WINGTerminal Position: SINGLETime Insulated Gate Bipolar Transistor, 60A I(C), 1200V V(BR)CES, N-Channel, TO-263AB, PLASTIC, TO-263, 3 PIN

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