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IXYS IXGH30N60A

  • IXGH30N60A

IXGH30N60A Insulated Gate Bipolar Transistor, 50A I(C), 600V V(BR)CES, N-Channel, TO-247AD; IXGH30N60A

· Categories: IGBT
· Manufacturer: IXYS
· Price:
Price Range: US$ 50 - US$ 200 (Estimated)
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· Date Code: Please Verify on Quote
. Available Qty: 652
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Content last revised on June 28, 2023

Manufacturer Part Number: IXGH30N60APart Life Cycle Code: ObsoleteIhs Manufacturer: IXYS CORPPackage Description: FLANGE MOUNT, R-PSFM-T3Manufacturer: IXYS CorporationRisk Rank: 5.12Additional Feature: HIGH SPEEDCase Connection: COLLECTORCollector Current-Max (IC): 50 ACollector-Emitter Voltage-Max: 600 VConfiguration: SINGLEFall Time-Max (tf): 500 nsGate-Emitter Thr Voltage-Max: 5 VGate-Emitter Voltage-Max: 30 VJEDEC-95 Code: TO-247ADJESD-30 Code: R-PSFM-T3Number of Elements: 1Number of Terminals: 3Operating Temperature-Max: 150 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPolarity/Channel Type: N-CHANNELPower Dissipation Ambient-Max: 200 WPower Dissipation-Max (Abs): 200 WQualification Status: Not QualifiedRise Time-Max (tr): 200 nsSubcategory: Insulated Gate BIP TransistorsSurface Mount: NOTerminal Form: THROUGH-HOLETerminal Position: SINGLETransistor Application: POWER CONTROLTransistor Element Material: SILICONTurn-off Time-Nom (toff): 850 nsTurn-on Time-Nom (ton): 300 nsVCEsat-Max: 3 V Insulated Gate Bipolar Transistor, 50A I(C), 600V V(BR)CES, N-Channel, TO-247AD

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