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IXYS IXGN320N60A3 IGBT Module

#IXYS, #IXGN320N60A3, #IGBT_Module, #IGBT, IXGN320N60A3 Insulated Gate Bipolar Transistor, 320A I(C), 600V V(BR)CES, N-Channel, MINIBLOC-4; IXGN320N60A3

· Categories: IGBT Module
· Manufacturer: IXYS
· Price: US$
· Date Code: Lead free / RoHS Compliant
. Available Qty: 879
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IXGN320N60A3 Specification

Sell IXGN320N60A3, #IXYS #IXGN320N60A3 Stock, IXGN320N60A3 Insulated Gate Bipolar Transistor, 320A I(C), 600V V(BR)CES, N-Channel, MINIBLOC-4; IXGN320N60A3, #IGBT_Module, #IGBT, #IXGN320N60A3
Email: sales@shunlongwei.com
URL: https://www.slw-ele.com/ixgn320n60a3.html

Manufacturer Part Number: IXGN320N60A3Pbfree Code: YesPart Life Cycle Code: ActiveIhs Manufacturer: IXYS CORPPackage Description: FLANGE MOUNT, R-XUFM-X4Pin Count: 4Manufacturer: IXYS CorporationRisk Rank: 2.26Additional Feature: LOW CONDUCTION LOSS, UL RECOGNIZEDCase Connection: ISOLATEDCollector Current-Max (IC): 320 ACollector-Emitter Voltage-Max: 600 VConfiguration: SINGLEGate-Emitter Voltage-Max: 20 VJESD-30 Code: R-XUFM-X4Number of Elements: 1Number of Terminals: 4Operating Temperature-Max: 150 °CPackage Body Material: UNSPECIFIEDPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 735 WQualification Status: Not QualifiedSubcategory: Insulated Gate BIP TransistorsSurface Mount: NOTerminal Finish: Nickel (Ni)Terminal Form: UNSPECIFIEDTerminal Position: UPPERTime Insulated Gate Bipolar Transistor, 320A I(C), 600V V(BR)CES, N-Channel, MINIBLOC-4

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