#IXYS, #IXGN50N60BD3, #IGBT_Module, #IGBT, IXGN50N60BD3 Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel, MINIBLOC-4; IXGN50N60BD3
Manufacturer Part Number: IXGN50N60BD3Pbfree Code: YesPart Life Cycle Code: ObsoleteIhs Manufacturer: IXYS CORPPackage Description: MINIBLOC-4Pin Count: 4Manufacturer: IXYS CorporationRisk Rank: 5.81Additional Feature: FASTCase Connection: ISOLATEDCollector Current-Max (IC): 75 ACollector-Emitter Voltage-Max: 600 VConfiguration: SINGLE WITH BUILT-IN DIODEGate-Emitter Voltage-Max: 20 VJESD-30 Code: R-PUFM-X4Number of Elements: 1Number of Terminals: 4Operating Temperature-Max: 150 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 250 WQualification Status: Not QualifiedSubcategory: Insulated Gate BIP TransistorsSurface Mount: NOTerminal Finish: Nickel (Ni)Terminal Form: UNSPECIFIEDTerminal Position: UPPERTime Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel, MINIBLOC-4