#IXYS, #IXGR60N60C3C1, #IGBT_Module, #IGBT, IXGR60N60C3C1 Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel, ISOPLUS247, 3 PIN; IXGR60N60C3C1
Manufacturer Part Number: IXGR60N60C3C1Pbfree Code: YesPart Life Cycle Code: ActiveIhs Manufacturer: IXYS CORPPart Package Code: ISOPLUSPackage Description: FLANGE MOUNT, R-PSFM-T3Pin Count: 3Manufacturer Package Code: ISOPLUSECCN Code: EAR99Manufacturer: IXYS CorporationRisk Rank: 2.2Case Connection: ISOLATEDCollector Current-Max (IC): 75 ACollector-Emitter Voltage-Max: 600 VConfiguration: SINGLE WITH BUILT-IN DIODEGate-Emitter Thr Voltage-Max: 5 VGate-Emitter Voltage-Max: 20 VJESD-30 Code: R-PSFM-T3JESD-609 Code: e1Number of Elements: 1Number of Terminals: 3Operating Temperature-Max: 150 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 170 WQualification Status: Not QualifiedSubcategory: Insulated Gate BIP TransistorsSurface Mount: NOTerminal Finish: Tin/Silver/Copper (Sn/Ag/Cu)Terminal Form: THROUGH-HOLETerminal Position: SINGLETime Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel, ISOPLUS247, 3 PIN