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IXYS IXSN62N60U1

  • IXSN62N60U1

IXSN62N60U1 Insulated Gate Bipolar Transistor, 90A I(C), 600V V(BR)CES, N-Channel, SOT-227B, 4 PIN; IXSN62N60U1

· Categories: IGBT
· Manufacturer: IXYS
· Price:
Price Range: US$ 50 - US$ 200 (Estimated)
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. Available Qty: 140
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Content last revised on May 27, 2023

Manufacturer Part Number: IXSN62N60U1Pbfree Code: YesPart Life Cycle Code: ObsoleteIhs Manufacturer: IXYS CORPPart Package Code: SOT-227Package Description: SOT-227B, 4 PINPin Count: 4Manufacturer: IXYS CorporationRisk Rank: 5.82Additional Feature: LOW SATURATION VOLTAGECase Connection: ISOLATEDCollector Current-Max (IC): 90 ACollector-Emitter Voltage-Max: 600 VConfiguration: SINGLE WITH BUILT-IN DIODEJESD-30 Code: R-XUFM-X4Number of Elements: 1Number of Terminals: 4Operating Temperature-Max: 150 °CPackage Body Material: UNSPECIFIEDPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELPower Dissipation Ambient-Max: 250 WPower Dissipation-Max (Abs): 250 WQualification Status: Not QualifiedSubcategory: Insulated Gate BIP TransistorsSurface Mount: NOTerminal Finish: Nickel (Ni)Terminal Form: UNSPECIFIEDTerminal Position: UPPERTime Insulated Gate Bipolar Transistor, 90A I(C), 600V V(BR)CES, N-Channel, SOT-227B, 4 PIN

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