Scan Part Number

Tap the focus box or CAPTURE to scan the part number.

Pinch screen or tap 1.4x button to zoom.

Recognizing Part Number...

IXYS IXTA6N100D2

  • IXTA6N100D2
  • IXTA6N100D2 Power Field-Effect Transistor, 2.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AA, PLASTIC PACKAGE-3; IXTA6N100D2

    · Categories: IGBT
    · Manufacturer: IXYS
    · Price:
    Price Range: US$ 50 - US$ 200 (Estimated)
    Submit RFQ to Get Price
    · Date Code: Please Verify on Quote
    . Available Qty: 621
    MOQ: 1 PC
    Express Shipping
    90-Day Warranty
    1-2 Days Lead Time
    100% Tested
    Whatsapp: 0086 189 2465 1869

    Content last revised on May 1, 2023

    Manufacturer Part Number: IXTA6N100D2Pbfree Code: YesPart Life Cycle Code: ActiveIhs Manufacturer: IXYS CORPPart Package Code: D2PAKPackage Description: PLASTIC PACKAGE-3Pin Count: 3Manufacturer: IXYS CorporationRisk Rank: 2.27Case Connection: DRAINConfiguration: SINGLE WITH BUILT-IN DIODEDrain-source On Resistance-Max: 2.2 ΩFET Technology: METAL-OXIDE SEMICONDUCTORJEDEC-95 Code: TO-263AAJESD-30 Code: R-PSSO-G2JESD-609 Code: e3Moisture Sensitivity Level: 2Number of Elements: 1Number of Terminals: 2Operating Mode: DEPLETION MODEOperating Temperature-Max: 150 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: SMALL OUTLINEPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 300 WQualification Status: Not QualifiedSubcategory: FET General Purpose PowerSurface Mount: YESTerminal Finish: Matte Tin (Sn)Terminal Form: GULL WINGTerminal Position: SINGLETime Power Field-Effect Transistor, 2.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AA, PLASTIC PACKAGE-3