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IXYS IXTA90N055T2

  • IXTA90N055T2
  • IXTA90N055T2 Power Field-Effect Transistor, 90A I(D), 55V, 0.0084ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, PLASTIC, TO-263AA, 3 PIN; IXTA90N055T2

    · Categories: IGBT
    · Manufacturer: IXYS
    · Price:
    Price Range: US$ 50 - US$ 200 (Estimated)
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    · Date Code: Please Verify on Quote
    . Available Qty: 2135
    MOQ: 1 PC
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    Content last revised on August 21, 2023

    Manufacturer Part Number: IXTA90N055T2Pbfree Code: YesPart Life Cycle Code: ActiveIhs Manufacturer: IXYS CORPPart Package Code: D2PAKPackage Description: TO-263AA, 3 PINPin Count: 4ECCN Code: EAR99Manufacturer: IXYS CorporationRisk Rank: 2.35Additional Feature: AVALANCHE RATEDAvalanche Energy Rating (Eas): 300 mJCase Connection: DRAINConfiguration: SINGLE WITH BUILT-IN DIODEDS Breakdown Voltage-Min: 55 VDrain Current-Max (Abs) (ID): 90 ADrain Current-Max (ID): 90 ADrain-source On Resistance-Max: 0.0084 ΩFET Technology: METAL-OXIDE SEMICONDUCTORJEDEC-95 Code: TO-263ABJESD-30 Code: R-PSSO-G2JESD-609 Code: e3Moisture Sensitivity Level: 2Number of Elements: 1Number of Terminals: 2Operating Mode: ENHANCEMENT MODEOperating Temperature-Max: 175 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: SMALL OUTLINEPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 150 WPulsed Drain Current-Max (IDM): 230 AQualification Status: Not QualifiedSubcategory: FET General Purpose PowerSurface Mount: YESTerminal Finish: Matte Tin (Sn)Terminal Form: GULL WINGTerminal Position: SINGLETime Power Field-Effect Transistor, 90A I(D), 55V, 0.0084ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, PLASTIC, TO-263AA, 3 PIN

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