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IXYS IXTH30N60P IGBT Module

#IXYS, #IXTH30N60P, #IGBT_Module, #IGBT, IXTH30N60P Power Field-Effect Transistor, 30A I(D), 600V, 0.24ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconduc

· Categories: IGBT Module
· Manufacturer: IXYS
· Price: US$
· Date Code: Lead free / RoHS Compliant
. Available Qty: 412
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IXTH30N60P Specification

Sell IXTH30N60P, #IXYS #IXTH30N60P Stock, IXTH30N60P Power Field-Effect Transistor, 30A I(D), 600V, 0.24ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247AD, 3 PIN; IXTH30N60P, #IGBT_Module, #IGBT, #IXTH30N60P
Email: sales@shunlongwei.com
URL: https://www.slw-ele.com/ixth30n60p.html

Manufacturer Part Number: IXTH30N60PPbfree Code: YesPart Life Cycle Code: ActiveIhs Manufacturer: IXYS CORPPart Package Code: TO-247ADPackage Description: FLANGE MOUNT, R-PSFM-T3Pin Count: 3Manufacturer: IXYS CorporationRisk Rank: 2.25Additional Feature: AVALANCHE RATEDAvalanche Energy Rating (Eas): 1500 mJCase Connection: DRAINConfiguration: SINGLE WITH BUILT-IN DIODEDS Breakdown Voltage-Min: 600 VDrain Current-Max (ID): 30 ADrain-source On Resistance-Max: 0.24 ΩFET Technology: METAL-OXIDE SEMICONDUCTORJEDEC-95 Code: TO-247ADJESD-30 Code: R-PSFM-T3JESD-609 Code: e1Number of Elements: 1Number of Terminals: 3Operating Mode: ENHANCEMENT MODEOperating Temperature-Max: 150 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELPulsed Drain Current-Max (IDM): 80 AQualification Status: Not QualifiedSurface Mount: NOTerminal Finish: Tin/Silver/Copper (Sn/Ag/Cu)Terminal Form: THROUGH-HOLETerminal Position: SINGLETime Power Field-Effect Transistor, 30A I(D), 600V, 0.24ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247AD, 3 PIN

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