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IXYS IXXK200N60B3 New IGBT Module

#IXYS, #IXXK200N60B3, #IGBT_Module, #IGBT, IXXK200N60B3 Insulated Gate Bipolar Transistor, 380A I(C), 600V V(BR)CES, N-Channel, TO-264AA, TO-264, 3 PIN; IXXK200N60

· Categories: IGBT Module
· Manufacturer: IXYS
· Price: US$
· Date Code: Lead free / RoHS Compliant
. Available Qty: 2094
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IXXK200N60B3 Specification

Sell IXXK200N60B3, #IXYS #IXXK200N60B3 New Stock, IXXK200N60B3 Insulated Gate Bipolar Transistor, 380A I(C), 600V V(BR)CES, N-Channel, TO-264AA, TO-264, 3 PIN; IXXK200N60B3, #IGBT_Module, #IGBT, #IXXK200N60B3
Email: sales@shunlongwei.com
URL: https://www.slw-ele.com/ixxk200n60b3.html

Manufacturer Part Number: IXXK200N60B3Rohs Code: YesPart Life Cycle Code: ActiveIhs Manufacturer: IXYS CORPPart Package Code: TO-264AAPackage Description: FLANGE MOUNT, R-PSFM-T3Pin Count: 3Manufacturer: IXYS CorporationRisk Rank: 5.66Additional Feature: AVALANCHE RATEDCase Connection: COLLECTORCollector Current-Max (IC): 380 ACollector-Emitter Voltage-Max: 600 VConfiguration: SINGLEGate-Emitter Thr Voltage-Max: 6 VGate-Emitter Voltage-Max: 20 VJEDEC-95 Code: TO-264AAJESD-30 Code: R-PSFM-T3Number of Elements: 1Number of Terminals: 3Operating Temperature-Max: 175 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPolarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 1630 WSubcategory: Insulated Gate BIP TransistorsSurface Mount: NOTerminal Form: THROUGH-HOLETerminal Position: SINGLETransistor Application: POWER CONTROLTransistor Element Material: SILICONTurn-off Time-Nom (toff): 395 nsTurn-on Time-Nom (ton): 140 ns Insulated Gate Bipolar Transistor, 380A I(C), 600V V(BR)CES, N-Channel, TO-264AA, TO-264, 3 PIN

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