#IXYS, #IXXK200N60B3, #IGBT_Module, #IGBT, IXXK200N60B3 Insulated Gate Bipolar Transistor, 380A I(C), 600V V(BR)CES, N-Channel, TO-264AA, TO-264, 3 PIN; IXXK200N60
Manufacturer Part Number: IXXK200N60B3Rohs Code: YesPart Life Cycle Code: ActiveIhs Manufacturer: IXYS CORPPart Package Code: TO-264AAPackage Description: FLANGE MOUNT, R-PSFM-T3Pin Count: 3Manufacturer: IXYS CorporationRisk Rank: 5.66Additional Feature: AVALANCHE RATEDCase Connection: COLLECTORCollector Current-Max (IC): 380 ACollector-Emitter Voltage-Max: 600 VConfiguration: SINGLEGate-Emitter Thr Voltage-Max: 6 VGate-Emitter Voltage-Max: 20 VJEDEC-95 Code: TO-264AAJESD-30 Code: R-PSFM-T3Number of Elements: 1Number of Terminals: 3Operating Temperature-Max: 175 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPolarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 1630 WSubcategory: Insulated Gate BIP TransistorsSurface Mount: NOTerminal Form: THROUGH-HOLETerminal Position: SINGLETransistor Application: POWER CONTROLTransistor Element Material: SILICONTurn-off Time-Nom (toff): 395 nsTurn-on Time-Nom (ton): 140 ns Insulated Gate Bipolar Transistor, 380A I(C), 600V V(BR)CES, N-Channel, TO-264AA, TO-264, 3 PIN