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IXYS IXXN200N60C3H1

  • IXXN200N60C3H1
  • IXXN200N60C3H1 Insulated Gate Bipolar Transistor, 200A I(C), 600V V(BR)CES,; IXXN200N60C3H1

    · Categories: IGBT
    · Manufacturer: IXYS
    · Price:
    Price Range: US$ 50 - US$ 200 (Estimated)
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    · Date Code: Please Verify on Quote
    . Available Qty: 592
    MOQ: 1 PC
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    Content last revised on July 19, 2023

    Manufacturer Part Number: IXXN200N60C3H1Rohs Code: YesPart Life Cycle Code: ActiveIhs Manufacturer: IXYS CORPManufacturer: IXYS CorporationRisk Rank: 5.63Collector Current-Max (IC): 200 ACollector-Emitter Voltage-Max: 600 VGate-Emitter Voltage-Max: 20 VNumber of Elements: 1Operating Temperature-Max: 150 °CPower Dissipation-Max (Abs): 780 WSubcategory: Insulated Gate BIP TransistorsVCEsat-Max: 2.1 V Insulated Gate Bipolar Transistor, 200A I(C), 600V V(BR)CES,

    v1.2.0