#Microsemi HI-REL [MIL], #JANS2N2222A, #IGBT_Module, #IGBT, JANS2N2222A Small Signal Bipolar Transistor, 0.8A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-18, HERMETIC SEALED, M
Manufacturer Part Number: JANS2N2222ARohs Code: NoPart Life Cycle Code: Contact ManufacturerIhs Manufacturer: SEMICOA CORPPart Package Code: BCYPackage Description: CYLINDRICAL, O-MBCY-W3Pin Count: 3ECCN Code: EAR99HTS Code: 8541.21.00.95Manufacturer: Semicoa SemiconductorsRisk Rank: 4.47Collector Current-Max (IC): 0.8 ACollector-Emitter Voltage-Max: 50 VConfiguration: SINGLEDC Current Gain-Min (hFE): 30JEDEC-95 Code: TO-18JESD-30 Code: O-MBCY-W3JESD-609 Code: e0Number of Elements: 1Number of Terminals: 3Operating Temperature-Max: 200 °CPackage Body Material: METALPackage Shape: ROUNDPackage Style: CYLINDRICALPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: NPNPower Dissipation-Max (Abs): 0.5 WQualification Status: QualifiedReference Standard: MIL-19500/255Subcategory: Other TransistorsSurface Mount: NOTerminal Finish: Tin/Lead (Sn/Pb)Terminal Form: WIRETerminal Position: BOTTOMTime Small Signal Bipolar Transistor, 0.8A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-18, HERMETIC SEALED, METAL CAN-3