#POWEREX, #KS621K20, #IGBT_Module, #IGBT, KS621K20 Power Bipolar Transistor, 200A I(C), 1000V V(BR)CEO, 1-Element, NPN, Silicon; KS621K20
Manufacturer Part Number: KS621K20Part Life Cycle Code: ObsoleteIhs Manufacturer: Powerex INCPackage Description: FLANGE MOUNT, R-XUFM-X4Manufacturer: Powerex Power SemiconductorsRisk Rank: 5.83Case Connection: ISOLATEDCollector Current-Max (IC): 200 ACollector-Emitter Voltage-Max: 1000 VConfiguration: DARLINGTON, 3 TRANSISTORS WITH BUILT-IN DIODE AND RESISTORDC Current Gain-Min (hFE): 100Fall Time-Max (tf): 3000 nsJESD-30 Code: R-XUFM-X4Number of Elements: 1Number of Terminals: 4Operating Temperature-Max: 150 °CPackage Body Material: UNSPECIFIEDPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPolarity/Channel Type: NPNPower Dissipation-Max (Abs): 1560 WQualification Status: Not QualifiedRise Time-Max (tr): 3000 nsSubcategory: BIP General Purpose PowerSurface Mount: NOTerminal Form: UNSPECIFIEDTerminal Position: UPPERTransistor Application: SWITCHINGTransistor Element Material: SILICONVCEsat-Max: 2.5 V Power Bipolar Transistor, 200A I(C), 1000V V(BR)CEO, 1-Element, NPN, Silicon